GT100HF120T1VH IGBT Module Features Short Circuit Rated 10μs Low Switching Loss Low Saturation Voltage: VCE (sat) = 1.98V @ IC = 100A , TC=25℃ 100% RBSOA Test (2×Ic) Low Stray Inductance HI-REL Power Terminals Lead Free, Compliant With RoHS Requirement Applications Industrial Inverters Servo Applications EV And EHV Induction Heating Internal Circuit Diagram Absolute Maximum RatingsTC = 25℃ unless otherwise specified Symbol Description Value Units VCES Collector-Emitter Blocking Voltage 1200 V VGES Gate-Emitter Voltage ±20 V IC Continuous Collector Current TC = 80℃ 100 A TC = 25℃ 180 A ICM(1) Peak Collector Current Repetitive TJ = 125℃ 200 A IF Diode Continuous Forward Current TJ = 125℃ 100 A IFM Peak FWD Current Repetitive 200 A 880 W 175 ℃ TC = 25℃ TJmax=175℃ PD Maximum Power Dissipation Per Leg TJ Maximum Junction Temperature TJ op Operation Temperature -40 +150 ℃ Tstg Storage Temperature -40 +125 ℃ Viso Isolation Voltage(All Terminals Shorted) 2500 V Mounting Torque Power Terminals Screw:M5 f = 50Hz, 1minute 5.0 N·m Mounting Screw:M6 6.0 N·m Notes : (1) Repetitive Rating: Pulse width limited by max. junction temperature

Electrical Characteristics of IGBT TJ = 25℃ unless otherwise specified Symbol Description Test Conditions Min. Typ. Max. Units OFF Characteristics V(BR)CES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1200 V ICES Collector-Emitter Leakage Current VGE = 0V, VCE = VCES TJ = 25℃ 400 μA TJ = 125℃ 1 mA IGES Gate-Emitter Leakage Current VGE = VGES, VCE = 0V TJ = 25℃ 300 nA TJ = 125℃ 600 nA 6.5 V ON Characteristics VGE(th) Gate-Emitter Threshold Voltage IC = 1 mA, VCE = VGE VCE(sat) Collector-Emitter Saturation Voltage IC = 100A , VGE = 15V 4.5 5.2 TJ = 25℃ 1.98 2.20 V TJ = 125℃ 2.27...

Electrical Characteristics of FWDTJ = 25℃ unless otherwise specified Symbol Description VFM Reverse Recovery Time Irr Peak Reverse Recovery Current Qrr IF100A, di/dt =650A/μs, Vrr = 600V, VGE = -15V Reverse Recovery Charge Typ. Max. TJ = 25℃ 2.2 2.4 TJ = 125℃ 2.4 TJ = 25℃ IF=100A, VGE = 0V Forward Voltage trr Test conditions Min. 270 TJ = 125℃ 420 TJ = 25℃ 40 TJ = 125℃ 50 TJ = 25℃ V ns A 4.7 TJ = 125℃ Units 10.6 µC Thermal Resistance Characteristics Symbol Description Typ. Max. Units RθJC Junction-To-Case (IGBT Part, Per Leg) 0.17 ℃/W RθJC Junction-To-Case (Diode Part, Per Leg) 0.27 ℃/W...

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