Cataloghi >
Rongtech Industry (Shanghai) Inc., >
GT100HF120T1VH IGBT module

GT100HF120T1VH IGBT module
7Pagine

Estratti del catalogo

GT100HF120T1VH IGBT Module Features Short Circuit Rated 10μs Low Switching Loss Low Saturation Voltage: VCE (sat) = 1.98V @ IC = 100A , TC=25℃ 100% RBSOA Test (2×Ic) Low Stray Inductance HI-REL Power Terminals Lead Free, Compliant With RoHS Requirement Applications Industrial Inverters Servo Applications EV And EHV Induction Heating Internal Circuit Diagram Absolute Maximum RatingsTC = 25℃ unless otherwise specified Symbol Description Value Units VCES Collector-Emitter Blocking Voltage 1200 V VGES Gate-Emitter Voltage ±20 V IC Continuous Collector Current TC = 80℃ 100 A TC = 25℃ 180 A ICM(1) Peak Collector Current Repetitive TJ = 125℃ 200 A IF Diode Continuous Forward Current TJ = 125℃ 100 A IFM Peak FWD Current Repetitive 200 A 880 W 175 ℃ TC = 25℃ TJmax=175℃ PD Maximum Power Dissipation Per Leg TJ Maximum Junction Temperature TJ op Operation Temperature -40 +150 ℃ Tstg Storage Temperature -40 +125 ℃ Viso Isolation Voltage(All Terminals Shorted) 2500 V Mounting Torque Power Terminals Screw:M5 f = 50Hz, 1minute 5.0 N·m Mounting Screw:M6 6.0 N·m Notes : (1) Repetitive Rating: Pulse width limited by max. junction temperature

Aprire il catalogo a pagina 1

Electrical Characteristics of IGBT TJ = 25℃ unless otherwise specified Symbol Description Test Conditions Min. Typ. Max. Units OFF Characteristics V(BR)CES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1200 V ICES Collector-Emitter Leakage Current VGE = 0V, VCE = VCES TJ = 25℃ 400 μA TJ = 125℃ 1 mA IGES Gate-Emitter Leakage Current VGE = VGES, VCE = 0V TJ = 25℃ 300 nA TJ = 125℃ 600 nA 6.5 V ON Characteristics VGE(th) Gate-Emitter Threshold Voltage IC = 1 mA, VCE = VGE VCE(sat) Collector-Emitter Saturation Voltage IC = 100A , VGE = 15V 4.5 5.2 TJ = 25℃ 1.98 2.20 V TJ = 125℃ 2.27...

Aprire il catalogo a pagina 2

Electrical Characteristics of FWDTJ = 25℃ unless otherwise specified Symbol Description VFM Reverse Recovery Time Irr Peak Reverse Recovery Current Qrr IF100A, di/dt =650A/μs, Vrr = 600V, VGE = -15V Reverse Recovery Charge Typ. Max. TJ = 25℃ 2.2 2.4 TJ = 125℃ 2.4 TJ = 25℃ IF=100A, VGE = 0V Forward Voltage trr Test conditions Min. 270 TJ = 125℃ 420 TJ = 25℃ 40 TJ = 125℃ 50 TJ = 25℃ V ns A 4.7 TJ = 125℃ Units 10.6 µC Thermal Resistance Characteristics Symbol Description Typ. Max. Units RθJC Junction-To-Case (IGBT Part, Per Leg) 0.17 ℃/W RθJC Junction-To-Case (Diode Part, Per Leg) 0.27 ℃/W...

Aprire il catalogo a pagina 3

Brand Logo Date Code Part Number Circuit Diagram

Aprire il catalogo a pagina 6

General — Information in this document is believed to be accurate and reliable. However.Rongtech does not give any représentions or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes Rongtech reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication...

Aprire il catalogo a pagina 7